DATASHEET

IRLR2705TRPBF TO-252 28A 55V 0.04OHM 25nC N-CHANNEL MOSFET
IRLR2705TRPBF
Type Designator: IRLR2705TRPBF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 11 nC

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 140 pF

Maximum Drain-Source On-State Resistance (Rds): 0.031(typ) Ohm

Package: TO252